Paper Title:
Optimization of 4H-SiC MOS Properties with Cesium Implantation
  Abstract

The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
751-754
DOI
10.4028/www.scientific.net/MSF.600-603.751
Citation
Y. Wang, T. Khan, T. P. Chow, "Optimization of 4H-SiC MOS Properties with Cesium Implantation", Materials Science Forum, Vols. 600-603, pp. 751-754, 2009
Online since
September 2008
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Price
$32.00
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