Paper Title:
Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure
  Abstract

In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure. The density of the interface states (Dit) and the oxide trapped charges (Not) are found to be ~7 x 1011 eV-1cm-2 @ Ec-Et = 0.2 eV, and ~ 4.8 x 1011 cm-2. The temperature dependencies on gate current density are explored to study the different charge transport mechanisms through the HfO2-based dielectric stack on 4H-SiC. In the low voltage region, the conduction mechanism is controlled by a space charge limited or electronic hopping conduction process. Beyond this region (1.25 MV/cm 2.5 MV/cm), and at higher temperatures Schottky emission (SE) fits the data very well. The barrier height is found to be ~1.5 eV, which is higher than the value for just HfO2 on SiC

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
759-762
DOI
10.4028/www.scientific.net/MSF.600-603.759
Citation
R. Mahapatra, A. B. Horsfall, N. G. Wright, "Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure", Materials Science Forum, Vols. 600-603, pp. 759-762, 2009
Online since
September 2008
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