Paper Title:
Improved Properties of AlON/4H SiC Interface for Passivation Studies
  Abstract

Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. The films were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. The AlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure. Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior to deposition, exhibited the smallest net positive interface charge. A large net negative interface charge was observed for samples with 10% oxygen content and for the samples with 8% oxygen content and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlON films demonstrated reduced leakage current compared to as-processed diodes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
763-766
DOI
10.4028/www.scientific.net/MSF.600-603.763
Citation
M. Wolborski, D.M. Martin, M. Bakowski, A. Hallén, I. Katardjiev, "Improved Properties of AlON/4H SiC Interface for Passivation Studies", Materials Science Forum, Vols. 600-603, pp. 763-766, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Win Bunjongpru, S. Porntheeraphat, N. Somwang, P. Khomdet, C. Hruanun, Amporn Poyai, J. Nukeaw
Abstract:The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target...
573
Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...
541
Authors: Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Abstract:We propose a treatment of nitrogen radical irradiation to 4H-SiC surfaces for improving thermally grown SiO2/SiC interfaces. X-ray...
507
Authors: Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Kohei Kozono, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We investigated the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing (FGA) for a thermally grown SiO2...
991
Authors: Takuji Hosoi, Shuji Azumo, Kenji Yamamoto, Masatoshi Aketa, Yusaku Kashiwagi, Shigetoshi Hosaka, Hirokazu Asahara, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:The mechanism of flatband voltage shift in SiC metal-oxide-semiconductor (MOS) capacitors with stacked gate dielectrics consisting of...
681