Paper Title:

Influence of Annealing on the Al2O3/4H-SiC Interface

Periodical Materials Science Forum (Volumes 600 - 603)
Main Theme Silicon Carbide and Related Materials 2007
Edited by Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages 767-770
DOI 10.4028/www.scientific.net/MSF.600-603.767
Citation Ulrike Grossner et al., 2008, Materials Science Forum, 600-603, 767
Online since September, 2008
Authors Ulrike Grossner, Marc Avice, Spyros Diplas, Annett Thøgersen, Jens S. Christensen, Bengt G. Svensson, Ola Nilsen, Helmer Fjellvåg, John F. Watts
Keywords 4H-SiC, ALCVD, Aluminium Oxide, Annealing, Interface, SIMS, TEM, XPS
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