Paper Title:

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Periodical Materials Science Forum (Volumes 600 - 603)
Main Theme Silicon Carbide and Related Materials 2007
Edited by Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages 77-82
DOI 10.4028/www.scientific.net/MSF.600-603.77
Citation Albert A. Burk et al., 2008, Materials Science Forum, 600-603, 77
Online since September, 2008
Authors Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal
Keywords Large-Area SiC Epitaxy, Warm-Wall Planetary Reactors
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Abstract

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.