SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 77-82 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.77 |
| Citation | Albert A. Burk et al., 2008, Materials Science Forum, 600-603, 77 |
| Online since | September, 2008 |
| Authors | Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal |
| Keywords | Large-Area SiC Epitaxy, Warm-Wall Planetary Reactors |
| Price | US$ 28,- |
The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.