Paper Title:
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
  Abstract

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
77-82
DOI
10.4028/www.scientific.net/MSF.600-603.77
Citation
A. A. Burk, M. J. O'Loughlin, J. J. Sumakeris, C. Hallin, E. Berkman, V. Balakrishna, J. Young, L. Garrett, K. G. Irvine, A. R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, B. A. Hull, A. K. Agarwal, "SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices", Materials Science Forum, Vols. 600-603, pp. 77-82, 2009
Online since
September 2008
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