Paper Title:
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
  Abstract

In this work, the correlation between thermal oxide breakdown and dislocations in n-type 4H-SiC epitaxial wafers has been investigated. Thermal oxide was grown by oxidation in N2O at 1250°C followed by annealing in NO atmosphere. The electron beam induced current (EBIC) technique was employed to find correlations between the electrically active defects in epitaxial layers and regions where the oxide breakdowns occurred. The test measurements of leakage currents in MOS devices were performed in order to correlate the leakage currents with number of defects in the epi-layer detected by EBIC technique.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
775-778
DOI
10.4028/www.scientific.net/MSF.600-603.775
Citation
S. I. Soloviev, K. Matocha, G. Dunne, Z. Stum, "Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers", Materials Science Forum, Vols. 600-603, pp. 775-778, 2009
Online since
September 2008
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$32.00
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