Paper Title:
Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
  Abstract

Reliability of thermal oxides grown on the n-type 4H-SiC substrates implanted by nitrogen ion with low doping levels equal to or less than 1x1018 cm-3 has been investigated. The surface morphology becomes rough by the nitrogen implantation and the post implantation annealing. The field-to-breakdown value decreases with increase in the nitrogen concentration. The average EBD values are 11.6 MV/cm, 11.3 MV/cm and 10.7 MV/cm for the samples without the implantation and with the nitrogen implantation of doping levels of 1x1017 cm-3 and 1x1018 cm-3, respectively. The time-to-breakdown values were also degraded with the increase of the nitrogen implantation doping level. The reliability degradation of thermal oxides is caused by the implantation-induced breakdown factor.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
779-782
DOI
10.4028/www.scientific.net/MSF.600-603.779
Citation
J. Senzaki, A. Shimozato, K. Fukuda, K. Arai, "Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration", Materials Science Forum, Vols. 600-603, pp. 779-782, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Stanislav I. Soloviev, Kevin Matocha, Greg Dunne, Zachary Stum
Abstract:In this work, the correlation between thermal oxide breakdown and dislocations in n-type 4H-SiC epitaxial wafers has been investigated....
775
Authors: Junji Senzaki, Atsushi Shimozato, Mitsuo Okamoto, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of...
787
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The Ti/4H-SiC Schottky barrier diodes with a field limiting ring (FLR) structure are fabricated. Two types of SBDs are prepared; one (SBD-A)...
643
Authors: Shuichi Ono, S. Katakami, Manabu Arai
Abstract:The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The...
675
Authors: Kohei Kozono, Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe
Abstract:The dielectric breakdown mechanism in 4H-SiC metal-oxide-semiconductor (MOS) devices was studied using conductive atomic force microscopy...
821