Paper Title:
Gate-Area Dependence of SiC Thermal Oxides Reliability
  Abstract

Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of dislocation defects on the TDDB characteristics was examined. Using the area-scaling rule, tBD distributions of thermal oxides with different gate-area were converged to one distribution under the same breakdown factor. Finally, the reliability prediction method of thermal oxides on 4H-SiC eliminating the effect of dislocation defects has been established.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
787-790
DOI
10.4028/www.scientific.net/MSF.600-603.787
Citation
J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda, H. Okumura, K. Arai, "Gate-Area Dependence of SiC Thermal Oxides Reliability", Materials Science Forum, Vols. 600-603, pp. 787-790, 2009
Online since
September 2008
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Price
$32.00
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