Paper Title:
TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
  Abstract

The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD of thermal oxide becomes smaller for the larger oxide area, the QBD of CVD oxide is almost independent of the investigated gate oxide area. The QBD at F = 50% of CVD oxide, 3 C/cm2, is two orders of magnitude larger for the area of 1.96×10-3 cm2 at 1 mA/cm2 compared to that of thermal oxide. More than 80% of the CVD oxide breakdown occurs at the field oxide edge and more than 70% of the thermal oxide breakdown in the inner gate area. These results suggest that the lifetime of CVD oxide is hardly influenced by the quality of SiC, while the defects and/or impurities in SiC affect the lifetime of thermally grown oxide.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
799-802
DOI
10.4028/www.scientific.net/MSF.600-603.799
Citation
K. Fujihira, S. Yoshida, N. Miura, Y. Nakao, M. Imaizumi, T. Takami, T. Oomori, "TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition ", Materials Science Forum, Vols. 600-603, pp. 799-802, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Geun Ho Song, Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Eun Dong Kim
661
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage...
679
Authors: Junji Senzaki, Atsushi Shimozato, Mitsuo Okamoto, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of...
787
Authors: Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe, Kazuo Arai
Abstract:The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were...
791
Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...
541