Paper Title:
Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
  Abstract

We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
803-806
DOI
10.4028/www.scientific.net/MSF.600-603.803
Citation
J. Rozen, S. Dhar, S. W. Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams, L. C. Feldman, "Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides", Materials Science Forum, Vols. 600-603, pp. 803-806, 2009
Online since
September 2008
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Price
$32.00
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