Paper Title:
Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
  Abstract

We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors (MOSFETs) from various sources and/or processes due to gate-bias stressing as a function of temperature. In some cases we see a dramatic increase in the instability with increasing temperature, consistent with interfacial charge trapping or de-trapping. In other cases the temperature response is very slight, and in still other cases we actually see VT instabilities that move in the opposite direction with bias, indicating the presence of mobile ions.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
807-810
DOI
10.4028/www.scientific.net/MSF.600-603.807
Citation
A. J. Lelis, D. B. Habersat, R. Green, N. Goldsman, "Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability ", Materials Science Forum, Vols. 600-603, pp. 807-810, 2009
Online since
September 2008
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Price
$32.00
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