Paper Title:
Characteristics of Sol-Gel Derived SiO2 Thick Film on 4H-SiC
  Abstract

Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm) deposited on n-type 4H-SiC have been investigated. The oxide was annealed in argon gas ambient for 30 minutes at 650, 750, 850, and 950°C, in order to optimize the oxide properties. Results indicated that the oxide is denser with a significant reduction in percentage of porosity as the annealing temperature increases, except for sample annealed at 950°C. The oxide annealed at 850°C was having values of refractive index and dielectric constant close to the values reported in thermally grown SiO2 and it has demonstrated the lowest leakage current density and total interface trap density. Viscous shear flow effect has been proposed as the main contributor for the reduction of physical properties when the oxide was annealed at 950°C.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
811-814
DOI
10.4028/www.scientific.net/MSF.600-603.811
Citation
J. L. Tan, K. Y. Cheong, R. , "Characteristics of Sol-Gel Derived SiO2 Thick Film on 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 811-814, 2009
Online since
September 2008
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Price
$32.00
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