Paper Title:
New Chemical Planarization of SiC and GaN Using an Fe Plate in H2O2 Solution
  Abstract

A novel chemical planarization method was developed for silicon carbide (SiC) and gallium nitride (GaN). This method uses catalytically generated hydroxyl radicals (OH*) to oxidize the wafer surface. OH* are generated by the reductive decomposition of hydrogen peroxide (H2O2) on the surface of the iron reference plate. An extremely flat surface without pits or scratches was obtained. Atomic force microscopy (AFM) revealed that the planarized surface had an atomic step-terrace structure, in which the step height corresponded to a single bilayer of 4H-SiC and GaN. Low electron energy diffraction (LEED) and cathodeluminescence spectroscopy showed that there was no crystallographic damage on the planarized surface.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
815-818
DOI
10.4028/www.scientific.net/MSF.600-603.815
Citation
J. Murata, A. Kubota, K. Yagi, Y. Sano, H. Hara, K. Arima, T. Okamoto, H. Mimura, K. Yamauchi, "New Chemical Planarization of SiC and GaN Using an Fe Plate in H2O2 Solution ", Materials Science Forum, Vols. 600-603, pp. 815-818, 2009
Online since
September 2008
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$32.00
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