Paper Title:
The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes
  Abstract

In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes (SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forward characteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP, so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities are eliminated or improved after CMP. Therefore, leakage current induced by barrier-height inhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots inside the active areas exhibits double barriers before CMP. This excludes that carrots are a cause of barrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at low bias and increases breakdown voltage due to the reduction of thermionic field emission and elimination of local enhanced electric fields.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
827-830
DOI
10.4028/www.scientific.net/MSF.600-603.827
Citation
K. Y. Lee, W. Z. Chen, M. A. Capano, "The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 600-603, pp. 827-830, 2009
Online since
September 2008
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$32.00
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