Paper Title:
Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
  Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
83-88
DOI
10.4028/www.scientific.net/MSF.600-603.83
Citation
M. Pons, S. I. Nishizawa, P. J. Wellmann, E. Blanquet, D. Chaussende, J. M. Dedulle, R. Madar, "Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling", Materials Science Forum, Vols. 600-603, pp. 83-88, 2009
Online since
September 2008
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