Paper Title:
The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
  Abstract

The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC) has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-like activation energy plot suggests that the primary removal occurs from particles adhered to the pad surface.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
839-842
DOI
10.4028/www.scientific.net/MSF.600-603.839
Citation
M. L. White, S. Reggie, N. Naguib, K. Nicholson, J. Gilliland, A. Walters, "The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries", Materials Science Forum, Vols. 600-603, pp. 839-842, 2009
Online since
September 2008
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$32.00
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