Beveling is essential for preventing the chipping of the edge of a wafer during surface polishing and other processes. Plasma chemical vaporization machining (PCVM) is an atmospheric-pressure plasma etching process. It has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, which are used for high-hardness materials such as silicon carbide, due to the generation of high-density radicals in atmospheric-pressure plasma. Furthermore, PCVM does not damage the wafer surface because it is a purely chemical process; therefore, it is considered that PCVM can be used as an effective method of beveling the edge of SiC wafers. In this paper, we report the investigation of the beveling of SiC wafers by PCVM.