A Silicon Carbide Accelerometer for Extreme Environment Applications
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 859-862 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.859 |
| Citation | Srihari Rajgopal et al., 2008, Materials Science Forum, 600-603, 859 |
| Online since | September, 2008 |
| Authors | Srihari Rajgopal, Daniel Zula, Steven Garverick, Mehran Mehregany |
| Keywords | Accelerometer, Capacitive, Harsh Environment, High Temperature, Poly-SiC, Silicon Carbide (SiC), Vibration |
| Price | US$ 28,- |
A polycrystalline silicon carbide (poly-SiC) surface-micromachined capacitive accelerometer is designed, fabricated and tested. Leveraging the superior thermo-mechanical and chemical resistance properties of SiC, the device is a first step toward cost-effective implementation of a new class of extreme environment accelerometers, for example for high temperature vibration and shock measurements, even thought this initial work is at room temperature. The accelerometer described herein is designed for a range of 5000 g and a bandwidth of 18 kHz, specifications consistent with commercially available piezoelectric devices for high-level mechanical impact measurements. Test results demonstrate the sensor achieving a resolution of 350 mg/√Hz at 1kHz with a sensitivity of 12 μV/g and a bandwidth of 10 kHz at room temperature.
