Paper Title:
Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H2) Concentration
  Abstract

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10 % carrier gas (H2) concentrations using Nano-Indentation. When carrier gas (H2) concentration was 10 %, it has been proved that the mechanical properties, Young’s Modulus and Hardness, of 3C-SiC are the best of them. In the case of 10 % carrier gas (H2) concentration, Young’s Modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to carrier gas (H2) concentrations was investigated by AFM (atomic force microscope), when carrier gas (H2) concentration was 10 %, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS applications, carrier gas (H2) concentration’s rate should increase to obtain better mechanical properties and surface roughness.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
867-870
DOI
10.4028/www.scientific.net/MSF.600-603.867
Citation
G. S. Chung, K. B. Han, "Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H2) Concentration", Materials Science Forum, Vols. 600-603, pp. 867-870, 2009
Online since
September 2008
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Price
$32.00
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