Paper Title:
Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses
  Abstract

We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
883-886
DOI
10.4028/www.scientific.net/MSF.600-603.883
Citation
H. Kawahara, T. Okada, R. Kumai, T. Tomita, S. Matsuo, S. Hashimoto, M. Yamaguchi, "Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses ", Materials Science Forum, Vols. 600-603, pp. 883-886, 2009
Online since
September 2008
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$32.00
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