Paper Title:
Critical Technical Issues in High Voltage SiC Power Devices
  Abstract

In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the progress and remaining challenges associated with SiC power MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been an excessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact that the threshold voltage is determined by the difference between two large numbers, namely, a large fixed oxide charge and a large negative charge in the interface traps. There may also be some significant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-induced stacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PN Schottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible for degradation of BJTs.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
895-900
DOI
10.4028/www.scientific.net/MSF.600-603.895
Citation
A. K. Agarwal, A. A. Burk, R. Callanan, C. Capell, M. K. Das, S. K. Haney, B. A. Hull, C. Jonas, M. J. O'Loughlin, M. O`Neil, J. W. Palmour, A. R. Powell, J. Richmond, S. H. Ryu, R. E. Stahlbush, J. J. Sumakeris, Q. J. Zhang, "Critical Technical Issues in High Voltage SiC Power Devices ", Materials Science Forum, Vols. 600-603, pp. 895-900, 2009
Online since
September 2008
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Price
$32.00
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