Paper Title:
Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
  Abstract

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
907-912
DOI
10.4028/www.scientific.net/MSF.600-603.907
Citation
K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. I. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai, "Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance", Materials Science Forum, Vols. 600-603, pp. 907-912, 2009
Online since
September 2008
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