Paper Title:
Applications-Based Design of SiC Technology
  Abstract

The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
919-924
DOI
10.4028/www.scientific.net/MSF.600-603.919
Citation
N. G. Wright, C. M. Johnson, A. B. Horsfall, C. Buttay, K. Vassilevski, W.S. Loh, R. Skuriat, P. Agyakwa, "Applications-Based Design of SiC Technology", Materials Science Forum, Vols. 600-603, pp. 919-924, 2009
Online since
September 2008
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Price
$32.00
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