Paper Title:
Applications-Based Design of SiC Technology
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 919-924 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.919 |
| Citation | Nicolas G. Wright et al., 2008, Materials Science Forum, 600-603, 919 |
| Online since | September, 2008 |
| Authors | Nicolas G. Wright, C. Mark Johnson, Alton B. Horsfall, Cyril Buttay, Konstantin Vassilevski, W.S. Loh, R. Skuriat, P. Agyakwa |
| Keywords | JFET, Package, Reliability, Thermal Cycling, Thermal Resistance |
| Price | US$ 28,- |
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Abstract
The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications.
