Paper Title:
Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Abstract

DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV 4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery stored charge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of the stored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were also employed to demonstrate the tremendous advances that have recently been made in 4H-SiC substrate quality.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
931-934
DOI
10.4028/www.scientific.net/MSF.600-603.931
Citation
B. A. Hull, J. J. Sumakeris, M. J. O'Loughlin, Q. J. Zhang, J. Richmond, A. R. Powell, M. J. Paisley, V. F. Tsvetkov, A. Hefner, A. Rivera, "Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers ", Materials Science Forum, Vols. 600-603, pp. 931-934, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, Konstantinos Zekentes, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
1029
Authors: J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao
1109
Authors: Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura
Abstract:Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC...
1359
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles Scozzie
Chapter 10: Device and Application
Abstract:In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...
895