Paper Title:
Reliability Aspects of High Voltage 4H-SiC JBS Diodes
  Abstract

1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not exhibit any degradation in forward mode whereas the 3.5 kV JBS diodes show a degradation after ten hours. This behaviour has been confirmed by the formation of Stacking Faults clearly illustrated by electroluminescence microscopy in 3.5 kV JBS diodes, whereas it is not the case for the 1.2 kV JBS diodes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
935-938
DOI
10.4028/www.scientific.net/MSF.600-603.935
Citation
P. Brosselard, N. Camara, X. Jordá, M. Vellvehi, E. Bano, J. Millan, P. Godignon, "Reliability Aspects of High Voltage 4H-SiC JBS Diodes", Materials Science Forum, Vols. 600-603, pp. 935-938, 2009
Online since
September 2008
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$32.00
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