Paper Title:
1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
  Abstract

4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the issues of an SiC-SBD are lower on-state current and a relatively larger-leakage current at the reverse bias than Si-PN diodes. A JBS (Junction Barrier Schottky) diode was proposed as a structure to realize a lower leakage current. We simulated the electrical characteristics of JBS diodes, where the Schottky electrode was made of molybdenum in order to optimize its performance. We fabricated JBS diodes based on the simulation with a diameter of 3.9mm (11.9 mm2). The JBS diode has a lower threshold voltage of 0.45 V, a large forward current of 40 A at Vf = 2.5V and a high breakdown voltage of 1660 V. Furthermore, the leakage current at 1200 V was remarkably low (Ir = 20 nA).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
939-942
DOI
10.4028/www.scientific.net/MSF.600-603.939
Citation
T. Yamamoto, J. Kojima, T. Endo, E. Okuno, T. Sakakibara, S. Onda, "1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current ", Materials Science Forum, Vols. 600-603, pp. 939-942, 2009
Online since
September 2008
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