Paper Title:
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Abstract

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
95-98
DOI
10.4028/www.scientific.net/MSF.600-603.95
Citation
C. Hecht, B. Thomas, R. A. Stein, P. Friedrichs, "Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes ", Materials Science Forum, Vols. 600-603, pp. 95-98, 2009
Online since
September 2008
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$32.00
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