Paper Title:
10 kV Silicon Carbide Junction Barrier Schottky Rectifier
  Abstract

The development of 10 kV silicon carbide (SiC) MOSFETs and Junction Barrier Schottky (JBS) diodes for application to a 13.8kV 2.7 MVA Solid State Power Substation (SSPS) is shown. The design of half-bridge power modules has extensively used simulation, from electron level device simulations to the system level trade studies, to develop the most efficient module for use in the SSPS. In the work presented within, numerical simulations and experimental results are shown to demonstrate the design and operation of 10 kV JBS diodes. It is shown that JBS diodes at 10 kV can reduce 31% of the switching losses at 20 kHz than the fastest SiC PiN diodes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
951-954
DOI
10.4028/www.scientific.net/MSF.600-603.951
Citation
T. McNutt, S. Van Campen, A. Walker, K. Ha, C. Kirby, M. Sherwin, R. Singh, H. Hearne, "10 kV Silicon Carbide Junction Barrier Schottky Rectifier", Materials Science Forum, Vols. 600-603, pp. 951-954, 2009
Online since
September 2008
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Price
$35.00
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