Paper Title:
Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
  Abstract

The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space of 3um, the FLR space of 3um, and the doping concentration of 5E18cm-3 showed the highest blocking voltage of 1500V.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
959-962
DOI
10.4028/www.scientific.net/MSF.600-603.959
Citation
I. H. Kang, J. Y. Song, S. J. Joo, W. Bahng, S. C. Kim, N. K. Kim, "Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process", Materials Science Forum, Vols. 600-603, pp. 959-962, 2009
Online since
September 2008
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Price
$32.00
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