Paper Title:
Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
  Abstract

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
967-970
DOI
10.4028/www.scientific.net/MSF.600-603.967
Citation
M. Nakamura, Y. Hashino, T. Furusho, H. Kinoshita, H. Shiomi, M. Yoshimoto, "Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy", Materials Science Forum, Vols. 600-603, pp. 967-970, 2009
Online since
September 2008
Export
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri N. Makarov
383
Authors: Gheorghe Pristavu, Gheorghe Brezeanu, Marian Badila, Florin Draghici, Razvan Pascu, Florea Craciunoiu
3.1 Doping, Implantation and Contacts
Abstract:This paper proposes a method of characterizing silicon carbide Schottky diodes with inhomogeneous contacts in temperature sensing...
577