Paper Title:
Device Simulation Model for Transient Analysis of SiC-SBD
  Abstract

We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to above 425 K. Other mobility models seem to be mostly inadequate because they are corresponding to the experimental condition under the temperature below 425 K.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
975-978
DOI
10.4028/www.scientific.net/MSF.600-603.975
Citation
M. Tomita, Y. Maeyama, M. Sato, Y. Fukuda, F. Honma, J. Ono, M. Shimizu, H. Iwakuro, "Device Simulation Model for Transient Analysis of SiC-SBD", Materials Science Forum, Vols. 600-603, pp. 975-978, 2009
Online since
September 2008
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