Paper Title:
Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
  Abstract

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode’s electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
983-986
DOI
10.4028/www.scientific.net/MSF.600-603.983
Citation
G. Brezeanu, M. Brezeanu, C. Boianceanu, F. Udrea, G.A.J. Amaratunga, P. Godignon, "Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes", Materials Science Forum, Vols. 600-603, pp. 983-986, 2009
Online since
September 2008
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$32.00
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