Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 99-102 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.99 |
| Citation | Joseph J. Sumakeris et al., 2008, Materials Science Forum, 600-603, 99 |
| Online since | September, 2008 |
| Authors | Joseph J. Sumakeris, Jason Henning, Michael J. O'Loughlin, Saptharishi Sriram, Vijay Balakrishna |
| Keywords | Directed Reagents, Epitaxy, Uniformity |
| Abstract | We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers. |
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