Paper Title:
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
  Abstract

We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
99-102
DOI
10.4028/www.scientific.net/MSF.600-603.99
Citation
J. J. Sumakeris, J. Henning, M. J. O'Loughlin, S. Sriram, V. Balakrishna, "Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates", Materials Science Forum, Vols. 600-603, pp. 99-102, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Gupta, E. Semenas, Ejiro Emorhokpor, J. Chen, Ilya Zwieback, Andrew E. Souzis, Thomas Anderson
Abstract:Over the past year, II-VI has transitioned from 2” to 3” commercial SiC substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC...
43
Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim
Abstract:The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the...
207