Paper Title:
3.3 kV-10A 4H-SiC PiN Diodes
  Abstract

An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The processed PiN diodes have been characterized in forward and reverse mode at different temperature. The larger diodes (2.56 mm2) have a very low leakage current around 20 nA @ 500V for temperatures up to 300°C. A performant yield (68%) was obtained on these larger diodes have a breakdown voltage superior to 500V. Electroluminescence characteristics have been done on these devices and they show that there is no generation of Stacking Faults during the bipolar conduction.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
991-994
DOI
10.4028/www.scientific.net/MSF.600-603.991
Citation
P. Brosselard, N. Camara, J. ul Hassan, X. Jordá, P. Bergman, J. Montserrat, J. Millan, "3.3 kV-10A 4H-SiC PiN Diodes ", Materials Science Forum, Vols. 600-603, pp. 991-994, 2009
Online since
September 2008
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Price
$32.00
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