Paper Title:
Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
  Abstract

A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical side-wall at the edge of pn junction and rounded corner at mesa bottom, has been formed by reactive ion etching (RIE). The junction termination extension (JTE) region has been optimized by device simulation, and simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been discussed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
995-998
DOI
10.4028/www.scientific.net/MSF.600-603.995
Citation
T. Hiyoshi, T. Hori, J. Suda, T. Kimoto, "Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes", Materials Science Forum, Vols. 600-603, pp. 995-998, 2009
Online since
September 2008
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$32.00
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