Paper Title
Page
Authors: Paul B. Klein, Joshua D. Caldwell, Amitesh Shrivastava, Tangali S. Sudarshan
Abstract:The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n-...
489
Authors: Dorothea Werber, Martin Aigner, D. Denoth, F. Wittmann, Gerhard Wachutka
Abstract:We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by...
493
Authors: Hideyuki Tsuboi, Megumi Kabasawa, Seika Ouchi, Miki Sato, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto
Abstract:The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down...
497
Authors: T. Kitamura, Shinichi Nakashima, Tomohisa Kato, K. Kojima, Hajime Okumura
Abstract:We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering...
501
Authors: Gwiy Sang Chung, Jun Ho Jeong
Abstract:This paper presents the Raman scattering characteristics of poly 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure...
505
Authors: K. Neimontas, Kęstutis Jarašiūnas, Rositza Yakimova, Mikael Syväjärvi, Gabriel Ferro
Abstract:We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC...
509
Authors: Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alla A. Lepneva, M.S. Ramm
Abstract:A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads...
513
Authors: Matthias Stockmeier, Sakwe Aloysius Sakwe, Philip Hens, Peter J. Wellmann, Rainer Hock, Andreas Magerl
Abstract:The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice...
517
Authors: Passapong Wutimakun, Hisashi Miyazaki, Yoichi Okamoto, Jun Morimoto, Toshihiko Hayashi, Hiromu Shiomi
Abstract:Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100] and...
521
Authors: Laurent Ottaviani, Michel Kazan, Pierre M. Masri, Thierry Sauvage
Abstract:Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A...
525
Showing 121 to 130 of 330 Paper Titles