Paper Title
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Authors: Mikhael Bechelany, Gabriel Ferro, Jacques Dazord, David Cornu, Philippe Miele
Abstract:The formation of dots by CVD in the hetero-system SiC-Si was studied in the two possible ways : Si dots on SiC substrate and SiC dots on Si...
571
Authors: A. Miranda, A. Estrella Ramos, M. Cruz Irisson
Abstract:In this work, the effects of the diameter and morphology on the electronic band structure of hydrogenated cubic silicon carbide (b-SiC)...
575
Authors: Konstantinos Rogdakis, Marc Bescond, Edwige Bano, Konstantinos Zekentes
Abstract:3C-SiC is a promising material for high power and high-speed electronic devices as well as in sensors operating at high temperatures or...
579
Authors: Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori
Abstract:Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated....
585
Authors: Toshiharu Ohnuma, Atsumi Miyashita, Misako Iwasawa, Masahito Yoshikawa, Hidekazu Tsuchida
Abstract:We perform a dynamical simulation of the SiO2/4H-SiC C-face interface oxidation process at 2500K using first-principles molecular dynamics...
591
Authors: Michael Grieb, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Heiner Ryssel
Abstract:The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of...
597
Authors: Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri
Abstract:In the present work, we systematically studied the effect of the annealing temperature (from 1400 °C to 1650 °C) on the electrical...
603
Authors: Kazuhiro Mochizuki, Hidekatsu Onose
Abstract:We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage...
607
Authors: Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda
Abstract:Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis...
611
Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa
Abstract:Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that...
615
Showing 141 to 150 of 330 Paper Titles