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Authors: Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via
Abstract:The defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes....
619
Authors: Thomas Kups, Katja Tonisch, M. Voelskow, Wolfgang Skorupa, Alexander Konkin, Jörg Pezoldt
Abstract:Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge...
623
Authors: S. Bet, N.R. Quick, Aravinda Kar
Abstract:Chromium (Cr) and selenium (Se) are laser doped in silicon carbide (4H-SiC p-type aluminium) to fabricate an embedded light emitting device...
627
Authors: Kenichiro Terui, Atsuko Sekiguchi, Hiroshi Yoshizaki, Junichi Koike
Abstract:The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at...
631
Authors: Reza Ghandi, Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling
Abstract:This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer...
635
Authors: Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Heu Vang, Dominique Planson
Abstract:N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of...
639
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: Oleg Korolkov, Natalja Sleptsuk, Alla A. Sitnikova, Mart Viljus, Toomas Rang
Abstract:In our early analytic reports [1,2] has been made the supposition that during the diffusion welding (DW) in subcontact area of SiC is formed...
647
Authors: Thomas Stauden, Florentina Niebelschütz, Katja Tonisch, Volker Cimalla, Gernot Ecke, Christian Haupt, Jörg Pezoldt
Abstract:Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at...
651
  | Authors: Hitoshi Habuka, Yusuke Katsumi, Yutaka Miura, Keiko Tanaka, Yasushi Fukai, Takaya Fukae, Yuan Gao, Tomohisa Kato, Hajime Okumura, Kazuo Arai
Abstract:The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal...
655
Showing 151 to 160 of 330 Paper Titles