Paper Title
Page
Authors: Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi
Abstract:We report investigations on the fabrication and electrical characterization in the range 27°C -290 °C of normally off 4H-SiC circular MOSFET...
699
Authors: Shigeomi Hishiki, Sergey A. Reshanov, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl
Abstract:N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel...
703
Authors: Shigeomi Hishiki, Naoya Iwamoto, Takeshi Ohshima, Hisayoshi Itoh, Kazu Kojima, K. Kawano
Abstract:The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post...
707
Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...
711
Authors: Aveek Chatterjee, Asha Bhat, Kevin Matocha
Abstract:We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest interface...
715
Authors: Corey J. Cochrane, Patrick M. Lenahan, Aivars J. Lelis
Abstract:We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line...
719
Authors: Jan M. Knaup, Peter Deák, Thomas Frauenheim
Abstract:Recently, Wang et. al. formulated a criterion for identifying the source of deep interface sates at the SiC/SiO2 interface, based on the...
723
Authors: Svetlana Beljakowa, Michael Krieger, Thomas Frank, Gerhard Pensl, Lia Trapaidze, Naoki Hatta, Masayuki Abe, Hiroyuki Nagasawa, Adolf Schöner
Abstract:3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance...
727
Authors: Jeong Hyun Moon, Kuan Yew Cheong, Ho Keun Song, Jeong Hyuk Yim, Myeong Sook Oh, Jong Ho Lee, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim
Abstract:We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post...
731
Authors: Shinji Nakagomi, Kenta Sato, Shun Suzuki, Yoshihiro Kokubun
Abstract:A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen and...
735
Showing 171 to 180 of 330 Paper Titles