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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p1175 Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT   [ 804 K ]
  Authors: Koji Nakayama, Yoshitaka Sugawara, Yoichi Miyanagi, Katsunori Asano, Shuuji Ogata, Shinichi Okada, Toru Izumi, Atsushi Tanaka
• p1179 Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters   [ 217 K ]
  Authors: Yoshitaka Sugawara, Shuuji Ogata, Yoichi Miyanagi, Katsunori Asano, Shinichi Okada, Atsushi Tanaka, Koji Nakayama, Toru Izumi
• p1183 A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,on and Fast Switching   [ 294 K ]
  Authors: Mrinal K. Das, Jon Zhang, Robert Callanan, Craig Capell, Jack Clayton, Matthew Donofrio, Sarah K. Haney, Fatima Husna, Charlotte Jonas, Jim Richmond, Joseph J. Sumakeris
• p1187 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance   [ 207 K ]
  Authors: Jon Zhang, Charlotte Jonas, Joseph J. Sumakeris, Anant K. Agarwal, John J. Palmour
• p1191 Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs   [ 1 M ]
  Authors: Yang Sui, James A. Cooper, X. Wang, Ginger G. Walden
• p1195 SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application   [ 958 K ]
  Authors: Sudip K. Mazumder, Tirthajyoti Sarkar
• p1199 Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers   [ 440 K ]
  Authors: Philip G. Neudeck, David J. Spry, Andrew J. Trunek, Laura J. Evans, Liang Yu Chen, Gary W. Hunter, D. Androjna
• p1203 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications   [ 662 K ]
  Authors: Jun Hu, Xiao Bin Xin, Petre Alexandrov, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy Jr.
• p1207 Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes   [ 238 K ]
  Authors: W.S. Loh, J.P.R. David, Stanislav I. Soloviev, H.Y. Cha, Peter M. Sandvik, J.S. Ng, C. Mark Johnson
• p1211 Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown   [ 292 K ]
  Authors: Stanislav I. Soloviev, Peter M. Sandvik, Alexey Vertiatchikh, K. Dovidenko, Ho Young Cha
• p1215 Schottky Barrier Lowering in 4H-SiC Schottky UV Detector   [ 629 K ]
  Authors: Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri
• p1219 The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity   [ 164 K ]
  Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, Vitalii V. Kozlovski
• p1223 High Power-Density SiC Converter   [ 518 K ]
  Authors: Shin Ichi Kinouchi, Hiroshi Nakatake, T. Kitamura, S. Azuma, S. Tominaga, Shuhei Nakata, Yukiyasu Nakao, T. Oi, Tatsuo Oomori
• p1227 3D Thermal Stress Model for SiC Power Modules   [ 594 K ]
  Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield, Clinton Laing, Jeffery Brown
• p1231 Efficiency Improvement of PV-Inverters with SiC-DMOSFETs   [ 208 K ]
  Authors: Bruno Burger, Dirk Kranzer, Olivier Stalter