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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p115 Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor   [ 241 K ]
  Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, Vanya Darakchieva, Erik Janzén
• p119 Development of a Practical High-Rate CVD System   [ 261 K ]
  Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida
• p123 SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate   [ 244 K ]
  Authors: Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa
• p127 Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions   [ 196 K ]
  Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via
• p131 Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC   [ 787 K ]
  Authors: Hiromitsu Takaba, Ai Sagawa, Miki Sato, Seika Ouchi, Yuko Yoshida, Yukie Hayashi, Emi Sato, Kenji Inaba, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto
• p135 Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC   [ 522 K ]
  Authors: Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via
• p139 Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD   [ 336 K ]
  Authors: Amitesh Shrivastava, Peter G. Muzykov, B. Pearman, S. Michael Angel, Tangali S. Sudarshan
• p143 Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers   [ 436 K ]
  Authors: Birgit Kallinger, Bernd Thomas, Jochen Friedrich
• p147 In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD   [ 182 K ]
  Authors: Guo Sheng Sun, Yong Mei Zhao, Liang Wang, Lei Wang, Wan Shun Zhao, Xing Fang Liu, Gang Ji, Yi Ping Zeng
• p151 Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM   [ 166 K ]
  Authors: Han Seok Seo, Ho Geun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Myeong Sook Oh, Jong Ho Lee, Yu Jin Choi, Hyeong Joon Kim
• p155 Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers   [ 4 M ]
  Authors: Wlodek Strupiński, Kinga Kościewicz, Jan Weyher, Andrzej Roman Olszyna
• p159 Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC   [ 155 K ]
  Authors: Krista Chindanon, Huang De Lin, Galyna Melnychuk, Yaroslav Koshka
• p163 Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method   [ 673 K ]
  Authors: Hrishikesh Das, Bharat Krishnan, Galyna Melnychuk, Yaroslav Koshka
• p167 Micropipe Dissociation through Thick n⁺ Buffer Layer Growth   [ 177 K ]
  Authors: Mike F. MacMillan, Edward K. Sanchez, Michael Dudley, Yi Chen, Mark J. Loboda
• p171 Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region   [ 991 K ]
  Authors: Naohiro Sugiyama, Yuuichi Takeuchi, Mitsuhiro Kataoka, Adolf Schöner, Rajesh Kumar Malhan