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Authors: Eugene Y. Tupitsyn, Alexander Galyukov, Maxim V. Bogdanov, Alexey Kulik, Mark S. Ramm, Yuri N. Makarov, Tangali S. Sudarshan
Abstract:In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to...
27
Authors: Krzysztof Grasza, Emil Tymicki
Abstract:Bulk crystals of 6H and 4H silicon carbide have been grown by PVT method. 6H-SiC were obtained in optimized near-to-equilibrium growth...
31
Authors: Avinash K. Gupta, Ilya Zwieback, Andrew E. Souzis, Murugesu Yoganathan, Thomas Anderson
Abstract:II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation...
35
Authors: J. Chen, S.C. Lien, Y.C. Shin, Zhe Chuan Feng, C.H. Kuan, J.H. Zhao, J.H. Zhao, Wei Jie Lu
Abstract:The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore...
39
Authors: Jian Min Hao, Li Jie Wang, Bin Fen, Xiang Quan Wang, Ying Hong, Da Lei Meng, Jun Min Guo, Ru Yue Yan
Abstract:An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point...
43
Authors: Yasuo Kito, Emi Makino, Kenji Inaba, Norikazu Hosokawa, Hidehiko Hiramatsu, Jun Hasegawa, Shoichi Onda, Hideyuki Tsuboi, Hiromitsu Takaba, Akira Miyamoto
Abstract:A simulation study for high temperature chemical vapor deposition (HTCVD) of silicon carbide (SiC) is presented. Thermodynamic properties of...
47
Authors: Yuri N. Makarov, R.A. Talalaev, A.N. Vorob'ev, Mark S. Ramm, Maxim V. Bogdanov
Abstract:This work focuses on computational analysis of SiC High Temperature Chemical Vapor Deposition (HTCVD) from silicon tetrachloride (SiCl4) and...
51
Authors: Mamoru Imade, Takashi Ogura, Masahiro Uemura, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori, Takatomo Sasaki, Masanobu Yamazaki, Shigekazu Suwabe
Abstract:We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is...
55
Authors: Ryo Tanaka, Kazuaki Seki, Satoshi Komiyama, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated effects of Ti and Ge additions to Si solvent on the volume and the polytype of SiC precipitate in unseeded SiC solution...
59
Authors: Toru Ujihara, Ryosuke Maekawa, Ryo Tanaka, Katsuhiro Sasaki, Kotaro Kuroda, Yoshikazu Takeda
Abstract:A solution growth of 3C-SiC was performed on (111)Si-face or )111(C-face of 3C-SiC seed crystal at around 1700 °C by dipping method. The...
63
Showing 11 to 20 of 330 Paper Titles