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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p1235 A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch   [ 790 K ]
  Authors: Won Suk Choi, Sung Mo Young, Richard L. Woodin, A.W. Witt, J. Shovlin
• p1239 Summary of SiC Research for Transportation Applications at ORNL   [ 1016 K ]
  Authors: Madhu S. Chinthavali, Burak Ozpineci, Leon M. Tolbert, Hui Zhang
• p1245 LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method   [ 796 K ]
  Authors: Fumio Kawamura, Hidekazu Umeda, Masanori Morishita, Ryohei Gejo, Masaki Tanpo, Mamoru Imade, Naoya Miyoshi, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Yasuo Kitaoka
• p1251 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications   [ 826 K ]
  Authors: Lin Lin Liu, Ting Gang Zhu, Michael Murphy, Marek Pabisz, Milan Pophristic, Boris Peres, Tom Hierl
• p1257 Status of GaN-Based Power Switching Devices   [ 1011 K ]
  Authors: Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda
• p1263 Progress in GaN MOSFET Technology   [ 318 K ]
  Authors: T. Paul Chow, W. Huang, T. Khan, K. Matocha, Y. Wang
• p1269 Growth of Thick AlN Layers by High Temperature CVD (HTCVD)   [ 5 M ]
  Authors: Arnaud Claudel, Elisabeth Blanquet, Didier Chaussende, M. Audier, D. Pique, Michel Pons
• p1273 Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition   [ 1 M ]
  Authors: X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, Hadis Morkoç, Robert P. Devaty, Wolfgang J. Choyke
• p1277 Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates   [ 1 M ]
  Authors: Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne
• p1281 Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers   [ 4 M ]
  Authors: Yoshihisa Abe, Jun Komiyama, Toshiyuki Isshiki, Shunichi Suzuki, Akira Yoshida, Hiroshi Ohishi, Hideo Nakanishi
• p1285 Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique   [ 1 M ]
  Authors: Gi Sub Lee, Myung Ok Kyun, Hyun Hee Hwang, Joon Ho An, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino
• p1289 Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate   [ 354 K ]
  Authors: Gwiy Sang Chung, Tae Won Lee
• p1293 Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations   [ 218 K ]
  Authors: T. Kitamura, Shinichi Nakashima, Hajime Okumura
• p1297 Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy   [ 180 K ]
  Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi
• p1301 Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds   [ 199 K ]
  Authors: Kestutis Jarašiūnas, T. Malinauskas, R. Aleksiejunas, Bo Monemar, V. Ralchenko, A. Gontar, E. Ivakin