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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p1305 Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy   [ 1 M ]
  Authors: Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima
• p1309 Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films   [ 219 K ]
  Authors: Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, Hiroshi Harima
• p1313 Material Properties of GaN Films Grown on SiC/SOI Substrate   [ 265 K ]
  Authors: Zhe Chuan Feng, C. Tran, Ian T. Ferguson, J.H. Zhao
• p1317 HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations   [ 3 M ]
  Authors: Toshiyuki Isshiki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, Hideo Nakanishi
• p1321 288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs   [ 343 K ]
  Authors: Seikoh Yoshida, Mitsuru Masuda, Yuki Niiyama, Jiang Li, Nariaki Ikeda, Takehiko Nomura
• p1325 Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance   [ 303 K ]
  Authors: Kazuki Nomoto, Masataka Satoh, Tohru Nakamura
• p1329 Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors   [ 141 K ]
  Authors: Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Akira Nakajima, Hajime Okumura, Akinori Ubukata, Yoshiki Yano, Nakao Akutsu
• p1333 Current Collapse Characteristic of AlGaN/GaN MIS-HEMT   [ 190 K ]
  Authors: Shuichi Yagi, Mitsuaki Shimizu, Yoshiki Yano, Akinori Ubukata, Nakao Akutsu
• p1337 The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure   [ 170 K ]
  Authors: Young Hwan Choi, Ji Yong Lim, Kyu Heon Cho, In Hwan Ji, Min Koo Han
• p1341 Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier   [ 244 K ]
  Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri
• p1345 Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs   [ 215 K ]
  Authors: Akira Nakajima, Shuichi Yagi, Mitsuaki Shimizu, Hajime Okumura
• p1349 DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator   [ 462 K ]
  Authors: Kazuyuki Hirama, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, Hiroshi Kawarada
• p1353 Diamond Doped by Hot Ion Implantation   [ 173 K ]
  Authors: Nobuteru Tsubouchi, M. Ogura, H. Watanabe, Akiyoshi Chayahara, Hideyo Okushi
• p1357 Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies   [ 433 K ]
  Authors: Keiko Inoue, Takeshi Nakagawa, Masanobu Yoshikawa, Noriyuki Hasuike, Hiroshi Harima
• p1361 Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal   [ 750 K ]
  Authors: K. Kuriyama, K. Matsumoto, M. Ooi, K. Kushida