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Authors: Hirokatsu Yashiro, Tatsuo Fujimoto, Noboru Ohtani, Taizo Hoshino, Masakazu Katsuno, Takashi Aigo, Hiroshi Tsuge, Masashi Nakabayashi, Hosei Hirano, Kohei Tatsumi
Abstract:The development of lapping and polishing technologies for SiC single crystal wafers has realized the fabrication of an extremely flat SiC...
819
Authors: Kazutoshi Hotta, Kenji Hirose, Yayoi Tanaka, Kenji Kawata, Osamu Eryu
Abstract:To use SiC substrate as a semiconductor device and epitaxial growth, the surface of SiC substrate should be made smooth at an atomic level...
823
Authors: Kung Yen Lee, Wen Zhou Chen, Michael A. Capano
Abstract:In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of...
827
Authors: Joon Ho An, Gi Sub Lee, Won Jae Lee, Byoung Chul Shin, Jung Doo Seo, Kap Ryeol Ku, Heon Decok Seo, Hae Do Jeong
Abstract:2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive...
831
Authors: Takeshi Okamoto, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Keita Yagi, Junji Murata, Hidekazu Mimura, Kazuto Yamauchi
Abstract:We report a damage-free and efficient planarization process for silicon carbide (SiC) using platinum as a catalyst in hydrofluoric acid (HF)...
835
Authors: Michael L. White, Stan Reggie, Nevin Naguib, Kenneth Nicholson, Jeffrey Gilliland, Alicia Walters
Abstract:The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced...
839
Authors: Takehiro Kato, Yasuhisa Sano, Hideyuki Hara, Hidekazu Mimura, Kazuya Yamamura, Kazuto Yamauchi
Abstract:Beveling is essential for preventing the chipping of the edge of a wafer during surface polishing and other processes. Plasma chemical...
843
Authors: Yasuhisa Sano, Masayo Watanabe, Takehiro Kato, Kazuya Yamamura, Hidekazu Mimura, Kazuto Yamauchi
Abstract:Silicon carbide (SiC) is a promising semiconductor material for power devices. However, it is extremely hard and chemically stable; thus...
847
Authors: Satarou Yamaguchi, Toshiya Noro, Hideaki Takahashi, Hideyoshi Majima, Yoshihisa Nagao, Katsuhiko Ishikawa, You Zhou, Tomohisa Kato
Abstract:In order to cut the ingots and slabs of the silicon carbide (SiC), we developed the new method of electric discharge machining (EDM). EDM is...
851
Authors: Tomohisa Kato, Toshiya Noro, Hideaki Takahashi, Satarou Yamaguchi, Kazuo Arai
Abstract:In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we...
855
Showing 201 to 210 of 330 Paper Titles