Paper Title
Authors: Kenji Fukuda, Shinsuke Harada, Junji Senzaki, Mitsuo Okamoto, Yasunori Tanaka, Akimasa Kinoshita, Ryouji Kosugi, Kazu Kojima, Makoto Kato, Atsushi Shimozato, Kenji Suzuki, Yusuke Hayashi, Kazuto Takao, Tomohisa Kato, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hajime Okumura, Hiromichi Ohashi, Kazuo Arai
Abstract:The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth...
Authors: Makoto Kitabatake, M. Tagome, S. Kazama, K. Yamashita, K. Hashimoto, Kunimasa Takahashi, O. Kusumoto, Kazuya Utsunomiya, Masashi Hayashi, M. Uchida, R. Ikegami, C. Kudo, S. Hashimoto
Abstract:Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage...
Authors: Nicolas G. Wright, C. Mark Johnson, Alton B. Horsfall, Cyril Buttay, Konstantin Vassilevski, W.S. Loh, R. Skuriat, P. Agyakwa
Abstract:The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best...
Authors: Hervé Morel, Dominique Bergogne, Dominique Planson, Brunp Allard, Régis Meuret
Authors: Brett A. Hull, Joseph J. Sumakeris, Michael J. O'Loughlin, Q. Jon Zhang, Jim Richmond, Adrian R. Powell, Michael J. Paisley, Valeri F. Tsvetkov, A. Hefner, Angel Rivera
Abstract:DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV...
Authors: Pierre Brosselard, Nicolas Camara, Xavier Jordá, Miquel Vellvehi, Edwige Bano, José Millan, Phillippe Godignon
Abstract:1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not...
Authors: Takeo Yamamoto, Jun Kojima, Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, Shoichi Onda
Abstract:4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the...
Authors: Eugene A. Imhoff, Karl D. Hobart
Abstract:Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented....
Authors: Jun Hu, Larry X. Li, Petre Alexandrov, Xiao Hui Wang, Jian H. Zhao
Abstract:4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped...
Authors: Ty McNutt, Stephen Van Campen, Andy Walker, Kathy Ha, Chris Kirby, Marc Sherwin, Ranbir Singh, Harold Hearne
Abstract:The development of 10 kV silicon carbide (SiC) MOSFETs and Junction Barrier Schottky (JBS) diodes for application to a 13.8kV 2.7 MVA Solid...
Showing 221 to 230 of 330 Paper Titles