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Authors: Kenya Yamashita, Kyoko Egashira, Koichi Hashimoto, Kunimasa Takahashi, Osamu Kusumoto, Kazuya Utsunomiya, Masashi Hayashi, Masao Uchida, Chiaki Kudo, Makoto Kitabatake, Shin Hashimoto
Abstract:In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage...
1115
Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda
Abstract:We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling bonds...
1119
Authors: Yukiyasu Nakao, Shoyu Watanabe, Naruhisa Miura, Masayuki Imaizumi, Tatsuo Oomori
Abstract:The shout-circuit ruggedness of prototype 1.2kV SiC MOSFETs has been investigated. The short-circuit measurements were carried out at 25 °C...
1123
Authors: Sei Hyung Ryu, Fatima Husna, Sarah K. Haney, Qing Chun Jon Zhang, Robert E. Stahlbush, Anant K. Agarwal
Abstract:This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high...
1127
Authors: Kevin Matocha, Zachary Stum, Steve Arthur, Greg Dunne, Ljubisa Stevanovic
Abstract:SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4...
1131
Authors: Ronald Green, Aderinto Ogunniyi, Dimeji Ibitayo, Gail Koebke, Mark Morgenstern, Aivars J. Lelis, Corey Dickens, Brett A. Hull
Abstract:In this paper, large area (0.18cm2) SiC DMOSFETs with 1.2 kV and 20 A rating are evaluated for power electronic switching applications. A...
1135
Authors: Ginger G. Walden, Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, Rob Howell
Abstract:For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt...
1139
Authors: Tomohiro Tamaki, Ginger G. Walden, Yang Sui, James A. Cooper
Abstract:We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional...
1143
Authors: Marko J. Tadjer, Karl D. Hobart, Eugene A. Imhoff, Fritz J. Kub
Abstract:Threshold voltage (Vth) was measured on 4H-SiC power DMOSFET devices as a function of temperature, gate stress, and gate stress time. Vth...
1147
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...
1151
Showing 271 to 280 of 330 Paper Titles