Paper Title
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Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao
Abstract:This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors (BJTs)....
1155
Authors: Q. Jon Zhang, Charlotte Jonas, Albert A. Burk, Craig Capell, Jonathan Young, Robert Callanan, Anant K. Agarwal, John W. Palmour, Bruce Geil, Charles Scozzie
Abstract:4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a...
1159
Authors: Chih Fang Huang, Chien Yuen Tseng
Abstract:This paper presents a simulation study on the thermal effects in 4H-SiC NPN BJTs. Simulation results show several important effects on the...
1163
Authors: Steven L. Kaplan, Aderinto Ogunniyi
Abstract:Continued improvement in silicon carbide (SiC) material processing has allowed development of efficient high temperature devices which are...
1167
Authors: K.G.P. Eriksson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling
Abstract:To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction...
1171
Authors: Koji Nakayama, Yoshitaka Sugawara, Yoichi Miyanagi, Katsunori Asano, Shuuji Ogata, Shinichi Okada, Toru Izumi, Atsushi Tanaka
Abstract:The behavior of stacking faults with regard to Vf degradations and TEDREC phenomena for 4.5 kV SiCGT have been investigated through the use...
1175
Authors: Yoshitaka Sugawara, Shuuji Ogata, Yoichi Miyanagi, Katsunori Asano, Shinichi Okada, Atsushi Tanaka, Koji Nakayama, Toru Izumi
Abstract:To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was...
1179
Authors: Mrinal K. Das, Q. Jon Zhang, Robert Callanan, Craig Capell, Jack Clayton, Matthew Donofrio, Sarah K. Haney, Fatima Husna, Charlotte Jonas, Jim Richmond, Joseph J. Sumakeris
Abstract:For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the...
1183
Authors: Q. Jon Zhang, Charlotte Jonas, Joseph J. Sumakeris, Anant K. Agarwal, John W. Palmour
Abstract:DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at...
1187
Authors: Yang Sui, James A. Cooper, X. Wang, Ginger G. Walden
Abstract:We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the...
1191
Showing 281 to 290 of 330 Paper Titles