Paper Title
Authors: Won Suk Choi, Sung Mo Young, Richard L. Woodin, A.W. Witt, J. Shovlin
Abstract:SuperFETTM MOSFETs and silicon carbide (SiC) Schottky diodes are applied to continuous conduction mode active power factor correction...
Abstract:Due to research results have already been published.
Authors: Fumio Kawamura, Hidekazu Umeda, Masanori Morishita, Ryohei Gejo, Masaki Tanpo, Mamoru Imade, Naoya Miyoshi, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Yasuo Kitaoka
Abstract:We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the...
Authors: Lin Lin Liu, Ting Gang Zhu, Michael Murphy, Marek Pabisz, Milan Pophristic, Boris Peres, Tom Hierl
Abstract:The first commercially viable high voltage (>600V) gallium nitride (GaN) Schottky barrier devices are reported. Though GaN does not have any...
Authors: Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda
Abstract:State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as...
Authors: T. Paul Chow, W. Huang, T. Khan, K. Matocha, Y. Wang
Abstract:GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaN interface. With optimized anneal conditions, an...
Authors: Arnaud Claudel, Elisabeth Blanquet, Didier Chaussende, M. Audier, D. Pique, Michel Pons
Abstract:To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN...
Authors: X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, Hadis Morkoç, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Planar m-plane GaN was grown on (1100) m-plane 6H-SiC substrates using high-temperature AlN nucleation layers by metalorganic chemical vapor...
Authors: Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne
Abstract:Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows...
Authors: Yoshihisa Abe, Jun Komiyama, Toshiyuki Isshiki, Shunichi Suzuki, Akira Yoshida, Hiroshi Ohishi, Hideo Nakanishi
Abstract:The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiC buffer layers has been investigated. From XRD analysis,...
Showing 301 to 310 of 330 Paper Titles