Paper Title
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Authors: Gi Sub Lee, Myung Ok Kyun, Hyun Hee Hwang, Joon Ho An, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino
Abstract:A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study,...
1285
Authors: Gwiy Sang Chung, Tae Won Lee
Abstract:Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system....
1289
Authors: T. Kitamura, Shinichi Nakashima, Hajime Okumura
Abstract:We characterized the HVPE grown freestanding GaN crystals with various shallow impurity concentrations by Raman scattering spectroscopy....
1293
Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi
Abstract:Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two...
1297
Authors: Kęstutis Jarašiūnas, T. Malinauskas, R. Aleksiejunas, Bo Monemar, V. Ralchenko, A. Gontar, E. Ivakin
Abstract:Defect related carrier recombination and transport properties have been investigated in differently doped HVPE GaN substrates and CVD...
1301
Authors: Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima
Abstract:We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level,...
1305
Authors: Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, Hiroshi Harima
Abstract:We have studied InGaN single-quantum-well (SQW) films using atomic force microscopy (AFM) and cathodoluminescence (CL) spectroscopy. It has...
1309
Authors: Zhe Chuan Feng, C. Tran, Ian T. Ferguson, J.H. Zhao
Abstract:Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition...
1313
Authors: Toshiyuki Isshiki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, Hideo Nakanishi
Abstract:Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211)...
1317
Authors: Seikoh Yoshida, Mitsuru Masuda, Yuki Niiyama, Jiang Li, Nariaki Ikeda, Takehiko Nomura
Abstract:We report on the 288 V-10 V DC- DC converter circuit using AlGaN/GaN HFETs for the first time. The AlGaN/GaN HFET with a large current and a...
1321
Showing 311 to 320 of 330 Paper Titles