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Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, Vanya Darakchieva, Erik Janzén
Abstract:The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor,...
115
Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida
Abstract:We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities...
119
Authors: Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa
Abstract:The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon...
123
Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via
Abstract:A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen...
127
Authors: Hiromitsu Takaba, Ai Sagawa, Miki Sato, Seika Ouchi, Yuko Yoshida, Yukie Hayashi, Emi Sato, Kenji Inaba, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto
Abstract:The mechanism of layer growth as well as defect formation in the SiC crystal is fundamentally important to derive its appropriate...
131
Authors: Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via
Abstract:A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the...
135
Authors: Amitesh Shrivastava, Peter G. Muzykov, B. Pearman, S. Michael Angel, Tangali S. Sudarshan
Abstract:Triangular defects and inverted pyramid type defects formed during homoepitaxial growth on 4H-SiC Si face, 4° off-cut towards [11-20]...
139
Authors: Birgit Kallinger, Bernd Thomas, Jochen Friedrich
Abstract:Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they can trigger the formation and expansion of...
143
Authors: Guo Sheng Sun, Yong Mei Zhao, Liang Wang, Lei Wang, Wan Shun Zhao, Xing Fang Liu, Gang Ji, Yi Ping Zeng
Abstract:The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane...
147
Authors: Han Seok Seo, Ho Geun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Myeong Sook Oh, Jong Ho Lee, Yu Jin Choi, Hyeong Joon Kim
Abstract:Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was...
151
Showing 31 to 40 of 330 Paper Titles