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Authors: Wlodek Strupiński, Kinga Kościewicz, Jan Weyher, Andrzej Roman Olszyna
Abstract:The influence of in situ etching of Si-face n-4H-SiC wafers in H2 and propane on the surface morphology of the grown epi-layers were examined...
155
Authors: Krista Chindanon, Huang De Lin, Galyna Melnychuk, Yaroslav Koshka
Abstract:In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The...
159
Authors: Hrishikesh Das, Bharat Krishnan, Galyna Melnychuk, Yaroslav Koshka
Abstract:In this work, the local-loading effect and its influence on the growth rate enhancement and the growth rate non-homogeneity is investigated...
163
Authors: Mike F. MacMillan, Edward K. Sanchez, Michael Dudley, Yi Chen, Mark J. Loboda
Abstract:Thick (> 25 µm) 4H n+ epitaxial layer growth was performed on 4H n+ substrates utilizing chlorine containing etch chemistries in a hot wall...
167
Authors: Naohiro Sugiyama, Yuuichi Takeuchi, Mitsuhiro Kataoka, Adolf Schöner, Rajesh Kumar Malhan
Abstract:The migration enhanced embedded epitaxy (ME3) mechanism and 2D dopant distribution of the embedded trench region is investigated with the aim...
171
Authors: Adolf Schöner, Naohiro Sugiyama, Yuuichi Takeuchi, Rajesh Kumar Malhan
Abstract:The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the...
175
Authors: Ryo Hattori, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei
Abstract:Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated....
179
Authors: Kenneth A. Jones, T.S. Zheleva, R.D. Vispute, Shiva S. Hullavarad, M. Ervin, S. Dhar
Abstract:At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the...
183
Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Takashi Tanaka, Akihiro Yauchi
Abstract:Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found...
187
Authors: Takashi Tanaka, Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi
Abstract:We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using...
191
Showing 41 to 50 of 330 Paper Titles